| 摘要 |
PURPOSE: To provide a stable structure without an increase in capacity, by joining a plurality of polysilicon layers mutually in a tooth form and forming a storage electrode. CONSTITUTION: A storage electrode 50 has a shape like a fin in a way that each wing part of the adjoining fins extends forward or backward mutually. A pair of polysilicon layers that constitute a storage electrode 50 are joined and mutually engaged in each tooth form. In this way, an edge part 52' of a second polysilicon layer 52 is engaged in a tooth form with a first polysilicon wall 54' mutually, while an edge part 51' of a first polysilicon layer 51 is engaged in a tooth form with a second polysilicon wall 53'. Then, the weakness of the fin structure is strengthened by the joining structure between polysilicon materials in the storage electrode 50. The capacity of the capacitor is improved without increasing area of the capacitor in a highly integrated DRAM. |
