Lateral IGBT device with switchable anode structure.

摘要

In a bipolar power component, for example an IGBT, having an emitter structure (12) for conductivity modulation and a drift region (10) of the opposite conductivity type, the emitter structure (12) is provided with a first contact (13) and the drift region (10) is provided with a second contact (15). The first contact (13) and the second contact (15) are connected to a controllable resistor circuit such that, as a function of a control signal in the resistor circuit (16), the current flows through the power component selectively via the first contact (13) and/or via the second contact (15) to a third contact (17) of the resistor circuit. In this way, the conductivity modulation can be disconnected for faster switching off of the power component.