发明名称 |
Semiconductor memory device having cylindrical capacitor and manufacturing method thereof |
摘要 |
The semiconductor memory device includes a semiconductor substrate 1 having a conductive layer 6 formed on its main surface. Word lines 4c, 4d and a bit line 11 is formed on the semiconductor substrate. Insulating films 8, 12 are provided to cover the word lines 4c, 4d and the bit line 11. A barrier film 14 is provided on the insulating films 8, 12 for protecting the insulating films 8, 12 from etchant. A cylindrical storage node 170 is electrically connected to the conductive layer 6. The cylindrical storage node 170 includes a bottom conductive portion 17a and a sidewall conductive portion 17b. An outer surface of the storage node 170 is covered with a capacitor insulating film 112. The outer surface of the cylindrical storage node 170 is covered with a cell plate 22, with the capacitor insulating film 112 interposed therebetween.
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申请公布号 |
US5408114(A) |
申请公布日期 |
1995.04.18 |
申请号 |
US19930070521 |
申请日期 |
1993.06.03 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KINOSHITA, MITSUYA;OKAMOTO, TATSUO;ARIMA, HIDEAKI;HACHISUKA, ATSUSHI |
分类号 |
H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L29/68 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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