| 摘要 |
An alignment mark system and method of using the same wherein each mask of a sequence of masks includes a mask sequence indicium, a first alignment feature and a second alignment feature spaced from the first alignment feature. Each of the mask sequence indicium, the first alignment feature and the second alignment feature produce a corresponding structure as a result of the photolithographic process. The structure resulting from the second alignment feature is aligned with the first alignment feature of the immediately succeeding mask for proper alignment of the mask sequence.
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