| 摘要 |
<p>PURPOSE: A semiconductor device with a buried gate and a method for manufacturing the same are provided to reduce the resistance of a buried gate by forming the shape of a trench at an active region to be isotropic to extend the bury area of the buried gate. CONSTITUTION: A semiconductor substrate(21) has an active region which is defined by an element isolation film(22). Trench(24A, 24B) is formed by etching the active region and the element isolation film at the same time. A gate insulating layer(25) is formed in the trench sidewall of the active region. A buried gate(26) is buried at a part of the trench.</p> |
