发明名称 VERTICAL SEMICONDUCTOR LASER WITH LATERAL ELECTRODE CONTACT
摘要 A vertical laser is typically formed by successive horizontal layers, epitaxially grown on a substrate, suitable for forming a bottom mirror, a bottomcladding layer, an active region, a top cladding layer, and a top mirror. In prior art, one of a pair of electrodes for enabling electrical pumping the laser--the "top"electrode--is attached to the top surface of the top mirror, whereby undesirably large amounts of heat are generated because of the relatively high impedance of the top mirror. To reduce this heat generation, the laser is redesigned to enable the top electrode to make lateral contact with the top cladding layer, whereby the impedance and hence the power loss are reduced.
申请公布号 CA2031541(C) 申请公布日期 1995.04.18
申请号 CA19902031541 申请日期 1990.12.05
申请人 AMERICAN TELEPHONE AND TELEGRAPH COMPANY 发明人 LURYI, SERGEY;XIE, YA-HONG
分类号 H01S5/00;H01S5/042;H01S5/183;(IPC1-7):H01S3/085 主分类号 H01S5/00
代理机构 代理人
主权项
地址