发明名称 |
SOI transistor threshold optimization by use of gate oxide having positive charge |
摘要 |
Threshold optimization for SOI transistors is achieved through the formation of a layer of positive charge within the gate to correspond to the positive polarity formed in the substrate by ion implantation for threshold voltage control. A positive charge layer is formed by furnishing sulfur ions on the substrate before growth of an oxide to form a portion of the gate oxide. The sulfur will form a charge layer on the surface of the oxide, and an additional oxide is then deposited on the same to form the gate oxide as a sandwich with the positive charge layer in the same.
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申请公布号 |
US5407850(A) |
申请公布日期 |
1995.04.18 |
申请号 |
US19930085321 |
申请日期 |
1993.06.29 |
申请人 |
DIGITAL EQUIPMENT CORPORATION |
发明人 |
DOYLE, BRIAN S.;PHILIPOSSIAN, ARA |
分类号 |
H01L21/28;H01L21/336;H01L29/51;(IPC1-7):H01L21/265;H01L21/335 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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