发明名称 FLAT CRT MANUFACTURING METHOD
摘要 preparing a transparent conductive solution of pH 1.5˜4 by adding organo amino silane ester to indium-sulphide, indium-nitride or indium-chloride dissolved solution; forming the conductive film by coating a screen panel (4) with the transparent conductive solution and drying the coatings at 50 deg.C; and coating the screen pannel (4) and the front pannel with a frit glass and baking the coatings at 450 deg.C.
申请公布号 KR950003458(B1) 申请公布日期 1995.04.13
申请号 KR19920006998 申请日期 1992.04.24
申请人 SAMSUNG ELECTRON DEVICES CO., LTD. 发明人 JANG, DONG - SHIK
分类号 H01J9/20;H01B1/06;H01J29/28;H01J31/12;(IPC1-7):H01J29/88 主分类号 H01J9/20
代理机构 代理人
主权项
地址