发明名称 |
FLAT CRT MANUFACTURING METHOD |
摘要 |
preparing a transparent conductive solution of pH 1.5˜4 by adding organo amino silane ester to indium-sulphide, indium-nitride or indium-chloride dissolved solution; forming the conductive film by coating a screen panel (4) with the transparent conductive solution and drying the coatings at 50 deg.C; and coating the screen pannel (4) and the front pannel with a frit glass and baking the coatings at 450 deg.C.
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申请公布号 |
KR950003458(B1) |
申请公布日期 |
1995.04.13 |
申请号 |
KR19920006998 |
申请日期 |
1992.04.24 |
申请人 |
SAMSUNG ELECTRON DEVICES CO., LTD. |
发明人 |
JANG, DONG - SHIK |
分类号 |
H01J9/20;H01B1/06;H01J29/28;H01J31/12;(IPC1-7):H01J29/88 |
主分类号 |
H01J9/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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