Negative photoresist composition, and etching process using same

摘要

The invention relates to a negative-working photoresist composition having excellent resolution and sensitivity which is virtually free from flaws attributable to development residues. The photoresist composition comprises (1) a photosensitive s-triazine compound represented by the formula (I) or (II), (2) a novolak resin, (3) an acid-crosslinking compound and (4) propylene glycol monoalkyl ether and/or an ester thereof <IMAGE> <IMAGE> where R1 and R2, which may be identical or different, are each a haloalkyl group or a haloalkenyl group having 1 to 3 carbon atoms; R3 is a hydrogen atom or a methyl group; R4 is a substituted or unsubstitued aryl group having 6 to 15 carbon atoms or a heterocyclic group having 1 to 3 rings and n is 1 or 2.