| 摘要 |
PURPOSE:To obtain a semiconductor photo-receiving element with higher quantum efficiency in the long wavelength band region by a method wherein a super thin film semiconductor layers containing a photo-absorption layer is formed in multi-layers through a buffer layer. CONSTITUTION:An N-type InP layer 2 is formed on a InP substrate 1 on which an N-type InAs layer 3 with thickness of 12Angstrom and a lattice constant larger than that of the substrate 1 and an N-type GaAs layer 4 with a thickness of 188Angstrom and a lattice constant smaller than that of the substrate 1 are laminated one after another by 25 layers. A super thin film semiconductor lamination structure 11 is formed in multi-layers through the InP layer 5 as a buffer layer, making it possible to effectively thicken the photo-receiving layer, with expected higher quantum efficiency. |
