| 摘要 |
PURPOSE:To maintain a stable and excellent recording sensitivity over a long period by providing the surface of the protective film on a substrate with a first recording film of GeSbTe formed by sputtering in gaseous Kr and more providing the surface thereof with a second recording film consisting of a material having a relatively large coefft. of light absorption. CONSTITUTION:An SiO2 film is formed as the first protective film 24 on an acrylic resin substrate 17. The GeSbTe film 25 is formed as the first recording film by sputtering in the gaseous Kr on the film 24 and the BiTe film 26 consisting of the material having the relatively large coefft. of light absorption is formed as the second recording film thereon. An SiO2 film 27 is then formed as a second protective film. The compsn. of GeSbTe consisting of the film 26 has the compsn. within a region enclosed by a straight line connecting Ge6Sb5 Te95 and Ge95Sb5Te0, a straight line connecting Ge95Sb0Te5 and Ge0Sb95Te5, and a straight line connecting Ge50Te50 and Ge50Sb50 in a ternary compsn. diagram of Ge, Sb and Te. |
