FABRICATING METHOD OF SCHOTTKY JUNCTION USING PECVD METHOD

摘要

The method includes depositing a thin tungsten film on a GaAs substrate under the deposition pressure of 1-10-1 Torr and the deposition temperature of 200˜300 degree C with a WF6-H2 or WF6-SiH4-H2 reaction system by a plasma enhanced chemical vapor deposition (PECVD) process, and fast-heat-treating the wafer at the temperature of less than 700 degree C, thereby forming a thin tungsten film for a schottky barrier and a metal wiring to obtain the low resistance film.