| 摘要 |
A method for obtaining diamond and diamond-like films from the gas phase, in which a plasma reaction zone is formed, a mixture of hydrocarbons and hydrogen is fed to the said zone, and a film is deposited on a substrate, is characterised in that the reaction zone is formed by a plasma flux at atmospheric pressure at a temperature T = 10<4> K, said flux comprising at least three axially symmetrically arranged convergent jets, and the film is deposited by passing the substrate at a high velocity not less than once through the flux zone. The gaseous mixture may be introduced at a rate of 0.1 - 10 litres/min., and the substrate passed through the flux at a rate of 0.1 - 10 metres/min. As a result of the processes occurring in the plasma flux, there is deposited on the substrate a diamond or diamond-like film having a high degree of adhesion to the substrate, at a rate of 1 micron/sec, which substantially exceeds the rate of deposition of similar films by known methods. The films formed find application in the electronics and optical industry.
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