摘要 |
<p>A silicon wafer-cleaning apparatus enables the two sides of silicon wafers (35) to be uniformly etched with a high degree of purity, permits rising processing to be executed in the same chamber as that in which the etching is executed, prevents particles of contaminating substance from adhering to the silicon wafers when the silicon wafers have just been etched, and further prevents an oxide film from being excessively formed on the silicon wafers. The cleaning apparatus is made up of a chamber (1) which is vertically divided into a mist-generating chamber (3) and a processing chamber (4) by a partitioning wall having a communication section, a opening/closing mechanism (20) including a shutter (21) for closing the communication section of the partitioning wall, a high-frequency oscillation member (8), attached to the chamber, for generating mist of an aqueous hydrofluoric acid solution in the mist-generating chamber (3), a high-frequency oscillator (9) for supplying high-frequency power to the high-frequency oscillation member (8), a conveyance mechanism (32) for conveying a cassette, in which a plurality of silicon wafers (35) are held in an upright state, to the processing chamber, a plurality of gas-ejecting nozzle members (29, 38), attached to the chamber and the shutter, for ejecting a gas toward regions between the silicon wafers held in the cassette, pure water-spraying nozzle members (41), attached to the chamber, for spraying pure water toward regions between the silicon wafers (35) held in the cassette, and a gas exhaust member (46) arranged inside the processing chamber to be lower than the cassette conveyed by the conveyance mechanism. <IMAGE></p> |
申请人 |
SHIN-ETSU HANDOTAI COMPANY LIMITED;PRE-TECH CO., LTD |
发明人 |
NETSU, SHIGEYOSHI, C/O S.E.H. MALAYSIA;KAMEYA, MASAKI, C/O S.E.H. MALAYSIA;HARADA, YASUYUKI;AMANO, HIROSHI |