| 摘要 |
A method for selectively diffusing gold into a silicon substrate, wherein a plurality of circuit elements spaced from each other are formed on a surface portion of the substrate and a gold layer, not covering the PN-junction exposed at the surface thereof, is deposited on the surface of a specific circuit element which is desired to have a high-switching speed and then said gold is subjected to thermal treatment so that said deposited gold may be diffused into said specific circuit element.
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