| 摘要 |
A multi-layered wiring structure, having a first level metal wiring layer and a second level metal wiring layer, is formed on a semiconductor substrate. A first level interlayer insulating film which has an undulation caused by the first level metal wiring layer, a second level metal wiring layer which also has an uneven surface, and a second level interlayer insulating layer are consecutively deposited on the semiconductor substrate. A reflection preventing film (TiN) of 80 nm or more thickness is deposited over the second level interlayer insulating film, and a resist layer is coated on the reflection preventing film. Then, an ultra-violet ray is irradiated through a patterning mask to make an opening corresponding to a contact hole. The reflection preventing film constrains a multi-reflection of the ultra-violet ray. Thus, an accuracy of the patterning of the contact hole is improved.
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