| 摘要 |
PURPOSE: To improve the adhesion method of polycrystalline silicon when forming a contact when manufacturing a semiconductor device. CONSTITUTION: In polycrystalline silicon films 22 and 23, electrical characteristics in wafer units need to be relatively uniform when being used, for example, as resistance. For achieving uniformity, a wafer temperature for providing the polycrystalline silicon must be identical within a narrow tolerance. A reaction occurs in an oven and it takes much time until a required temperature tolerance is reached. The oven stabilizes temperature but an oxide that is an insulator begins to grow at the contact position of each substrate 11. For minimizing the formation of a harmful oxide, the polycrystalline thin film 22 is adhered long time before the oven becomes stable, thus securing an improved low-resistance contact. The remaining part 23 of the polycrystalline silicon is adhered on the polycrystalline silicon thin film 22 after temperature becomes stable, thus obtaining a uniform resistance in required wafer units.
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