METHOD FOR OBTAINING DIAMOND AND DIAMOND-LIKE FILMS

摘要

The invention relates to electronics and optimal industry technoligy. Deposition of diamond and diamond-like films is performed in a plasma flux at atmospheric pressure at a temperature T = 10<4> K. A mixture of hydrocarbons and hydrogen is fed to a plasma flux formed by the confluence of a plurality of jets. As a result of the processes occurring in the plasma flux, there is deposited on the substrate a diamond or diamond-like film having a high degree of adhesion to the substrate, at a rate of 1 micron/sec, which substantially exceeds the rate of deposition of similar films by known methods.