| 摘要 |
<p>Using the title semiconductor device, a synapse circuit through which no steady-state current flows, whose positive and negative weights can be realized by a single 5-V current, and which has a self-learning function is realized. This semiconductor device comprises first and second power source lines which supply high and low two potentials a first NMOS having a first floating gate, and a second PMOS having a second floating gate. The source and drain of the first NMOS are connected to the second and first power source lines through third NMOS and fourth PMOS, respectively. The source and drain of the second PMOS are connected in the first and second power source lines through fifth PMOS and sixth NMOS, respectively. The sources of the first NMOS and second PMOS are connected to the thrid floating gate through first and second capacitors, respectively. <IMAGE></p> |
