| 发明名称 |
Semiconductor device and method of manufacturing thereof |
| 摘要 |
A LOCOS oxide film is provided in a main surface of a semiconductor substrate for isolating an element region from another element region. A channel cut layer formed of a P-type impurity is provided under the element region. A P+ impurity region having a concentration thicker than that of P-type impurity of channel cut layer is formed directly under a bird's beak portion of LOCOS oxide film in the main surface of semiconductor substrate. Therefore, an isolation breakdown voltage of an N-channel transistor region is increased.
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| 申请公布号 |
US5399895(A) |
申请公布日期 |
1995.03.21 |
| 申请号 |
US19940198075 |
申请日期 |
1994.02.17 |
| 申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KOGA, TSUYOSHI |
| 分类号 |
H01L21/76;H01L21/316;H01L21/762;H01L21/822;H01L21/8238;H01L21/8242;H01L27/04;H01L27/08;H01L27/092;H01L27/108;H01L29/10;(IPC1-7):H01L27/04;H01L21/265 |
主分类号 |
H01L21/76 |
| 代理机构 |
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