| 摘要 |
PURPOSE:To prevent a diffused layer from spreading over adjacent light emitting parts without reducing the widths of the respective light-emitting parts by a method wherein p-type impurities are thermally diffused after trenches separating the respective light-emitting parts from each other are formed in an epitaxial layer. CONSTITUTION:An epitaxial layer 12 is made to grow on a substrate 11 and a ceramic film 20 is deposited on the epitaxial layer 12 to provide an etching mask 22 having etching windows 21. Parts of the epitaxial layer 12 which are exposed from the etching windows 21 are etched to form trenches 23 which separate regions to be respective light-emitting parts from each other. After the trenches 23 are formed, the etching mask 22 is removed and an insulating film 13 is deposited over the surface of the epitaxial layer 12 to provide a selective diffusion mask 15 having diffusion windows 14. Then p-type impurities are thermally diffused to form diffused regions 16. Finally, anodes 17 and a cathode 18 are applied to complete a diode array chip. With this constitution, as the adjacent diffused regions 16 are separated from each other by the trenches 23, the diffused regions 16 do not spread over a plurality of the light- emitting parts. |
