| 摘要 |
<p>PURPOSE: To provide a simplified method for easily individualizing chips from a wafer, with a standard IC manufacturing installation for silicon treatment technique, especially in a silicon wafer. CONSTITUTION: Trenches 7 are formed between chips 3 by etching an SOI substrate as far as an insulating layer 2. Spacers 6 are formed in order to make SiO2 layers 4 of the chips inert. Chips are individualized by etching and eliminating the insulating layer 2.</p> |
