发明名称 |
Method for fabricating solid state radiation imager having improved scintillator adhesion. |
摘要 |
A method of fabricating a radiation imager with strong structural integrity and adhesion between the scintillator and photosensor array includes the steps of forming a photosensor array on a substrate; depositing a barrier layer over the photosensor array, the barrier layer having an upper surface of silicon nitride; treating the silicon nitride upper surface of the barrier layer to prepare the surface for the deposition of material thereover; and depositing a scintillator material over the treated upper surface of the barrier layer. The silicon nitride upper surface of the barrier layer is typically treated by etching the surface, such as in a reactive ion etch, for a selected amount of time, with less than about 500 ANGSTROM of material being removed from the surface. <IMAGE> |
申请公布号 |
EP0643425(A1) |
申请公布日期 |
1995.03.15 |
申请号 |
EP19940306161 |
申请日期 |
1994.08.19 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
KWASNICK, ROBERT FORREST;EHLE, ROGER SHULTS;SAIA, RICHARD JOSEPH |
分类号 |
G01T1/20;H01L21/28;H01L31/0216;H01L31/0232 |
主分类号 |
G01T1/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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