发明名称 Method for fabricating solid state radiation imager having improved scintillator adhesion.
摘要 A method of fabricating a radiation imager with strong structural integrity and adhesion between the scintillator and photosensor array includes the steps of forming a photosensor array on a substrate; depositing a barrier layer over the photosensor array, the barrier layer having an upper surface of silicon nitride; treating the silicon nitride upper surface of the barrier layer to prepare the surface for the deposition of material thereover; and depositing a scintillator material over the treated upper surface of the barrier layer. The silicon nitride upper surface of the barrier layer is typically treated by etching the surface, such as in a reactive ion etch, for a selected amount of time, with less than about 500 ANGSTROM of material being removed from the surface. <IMAGE>
申请公布号 EP0643425(A1) 申请公布日期 1995.03.15
申请号 EP19940306161 申请日期 1994.08.19
申请人 GENERAL ELECTRIC COMPANY 发明人 KWASNICK, ROBERT FORREST;EHLE, ROGER SHULTS;SAIA, RICHARD JOSEPH
分类号 G01T1/20;H01L21/28;H01L31/0216;H01L31/0232 主分类号 G01T1/20
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