| 摘要 |
The method includes the steps of forming a 1st oxidation stopper layer of SixOyNz on the substrate (30), forming an etching stopper layer (34)thereon, forming a 2nd oxidation stopper layer (36) on the layer (34), forming a 1st opening part (11) into the layer (36), forming a 3rd oxidation stopper layer (38) thereon, anisotrophically etching the whole substrate to remove the 3rd and 2nd layer (38,36) and to form a 2nd opening part (5) into the layer (32) simulaneously, etching the substrate through the opening part (5) to form a trench (3), filling the trench (3) with oxide materials, and oxidizing the upper oxide materials to form a field oxide film (40b), thereby preventing the bird`s beacks to reduce the device size.
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