| 摘要 |
The method includes the steps of forming a 1st gate oxide film (4) and an insulating film (5) on the substrate (1), to form an opening part (B) in the film (5), forming a spacer (20) on the side wall of opening (B) to form a small opening part (C), implanting impurity ions thereinto, depositing and patterning a conductive material thereon to form a buried gate electrode (7A) and a poly-Si layer (7B) as a gate electrode (7), and implanting ions thereinto to form a source and drain region (9) separated from the impurity ion layer (8), thereby preventing the breakdown voltage from being reduced, and improving the leakage current to reduce the device size.
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