| 摘要 |
The method includes the steps of forming an N- region (2) on the P silicon substrate (1), forming a device isolating oxide film (3) on the portion of N- region (2), forming a screen oxide film (4) on the film (3) and the exposed region (2), implanting Si ions 1015/cm2 at energy of 40KeV into the N- region (2) through the screen oxide film (4), implanting BF2 ions 3 × 1015/cm2 at energy of 50KeV into the predetermined portion of ion-implanted region (2), and heat-treating the substrate to form a P+ region (5), thereby amorphising the silicon substrate to reduce the junction depth and leakage current.
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