| 摘要 |
PURPOSE:To make it possible to prevent the generation of defects in wirings and insulating layers caused by a photo process, by a double resist method wherein a photosensitive polyimide is used as a resist, the wiring is formed by the use of the resist, and the wiring is covered with a photosensitive polyimide for forming a polyimide of the insulating layer. CONSTITUTION:A polyimide 10 is formed on a substrate and a thin film 1, which is used as a wiring layer, is formed thereon. A photosensitive polyimide 9 is applied on the film 1, an exposure, a developing and a baking are performed and a layer insulating layer, which is used in combination as a resist for wiring formation, is formed. Moreover, an intrinsic resist 3 for wiring formation is formed on the resist for wiring formation, which consists of this photosensitive polyimide. After an etching of the wiring layer is performed using this double resist, the removal of the resist is performed and a wiring is formed. A polyimide film 11 is applied on this wiring, a baking is performed and a layer insulating layer is formed. Then, a resist for through hole is formed, the polyimide is etched and a through hole is formed. |
