| 摘要 |
PURPOSE:To form a high-performance multilayered dielectric reflecting film on the end face of an optical functional element composed of an InP semiconductor without deteriorating the performance and reliability of the functional element. CONSTITUTION:After forming a first film 21 of SiNx, SiO2, or Si on the light emitting surface 18 of a semiconductor laser element 11 by the plasma CVD method, a multilayered second film 22 is formed on the film 21 by the ion- assisted electron beam vapor-depositing method. Therefore, a high-performance multilayered reflecting film front which no leak current is generated can be formed, since the semiconductor junction exposed on the light emitting surface 18 of the element 11 is not destroyed. |
