SEMICONDUCTOR MEMORY DEVICE AND FABRICATING METHOD THEREOF

摘要

The method includes the steps of ; a 1st insulating film (9) for a transistor ; exposing the source region (3) of transistor to form and etch a 1st conducting layer and a 2nd insulating film thereon by using a first mask pattern to reoexpose the region (3) ; etching the substrate to form a trench (20) to remove the mask pattern and insulating film ; forming and etching-back and forming a 2nd conducting layer (15) to form a storage electrode used as a 1st electrode of capacitor ; thereby connecting between the storage electrode of capacitor and the source region of transistro by using the connecting layer.