| 摘要 |
The sense amplifier includes a main sense amplifier placed over and under a bit line with a cell array in the center, and a subsidiary sense amplifier for amplifying the voltage difference of cell data, two terminals of which are connected to a bit line opposite to the bit line of the main sense amplifier, and one terminal of which is connected to the enable signal of the main sense amplifier, thereby shortening the restore time of DRAM.
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