| 摘要 |
<p>PURPOSE:To obtain a high-frequency probe device having low losses whereby the transmission of the signal of the wideband extending from DC to the frequency not lower than 100GHz and the application of such a signal to an element to be tested are made possible, by providing respectively in the device an optical inputting terminal, a photoelectric conversion element, an optical signal transmitting medium, a waveform shaping circuit for electric signal, an electric signal outputting terminal, and an electric signal transmitting medium. CONSTITUTION:A high-frequency probe device is used for the estimations of the high-frequency electric characteristics of semiconductor elements and semiconductor integrated elements to be tested. In such high-frequency probe device, an optical signal inputting terminal 11, a photoelectric conversion element 13, an optical signal transmitting medium 12 whereby an optical signal inputted to the optical signal inputting terminal 11 is guided to the photoelectric conversion element 13, a waveform shaping circuit 15 for electric signals whereby the electric signal is matched with the inputting condition of the element to be tested, and an electric signal outputting terminal 17 are provided respectively. Further, first and second electric signal transmitting media 14, 16 are provided respectively in the device. By the first electric signal transmitting medium 14, the electric signal output of the photoelectric conversion element 13 is guided to the waveform shaping circuit 15 for electric signals. By the second electric signal transmitting medium 16, the electric signal output of the waveform shaping circuit 15 for electric signals is guided to the electric signal outputting terminal 17.</p> |
