SEMICONDUCTOR DEVICE AND ITS PRODUCTION

摘要

PURPOSE:To realize a high-speed operation in a peripheral circuit part and decrease OFF-state current value in a pixel part by forming TFTs in both parts by crystalline silicon films which are respectively crystal-grown in a parallel direction to the carrier flow in the peripheral circuit part and in a vertical direction against it in the pixel part. CONSTITUTION:An amorphous silicon film 104 is annealed for crystallization in a hydrogen reduction atmosphere or inactive atmosphere. At this time, the film 104 is crystallized in a vertical direction against a substrate 101 in an area where a nickel silicide film is formed selectively. In region adjacent to the substrate 100, crystal growth is progressed in a horizontal direction against the region 100 (a direction parallel to the substrate) as indicated in an arrow mark 105. The source/drain regions of the TFT in the peripheral circuit part are formed in such a crystal growth direction. In addition, those of the TFT in the pixel part are formed in a direction which crosses at a right angle the crystal growth direction indicated by the mark 105. Thus high speed operation can be realized.