| 摘要 |
<p>PURPOSE:To provide a method for isolating elements of a semiconductor laser device easily. CONSTITUTION:In a method for isolating a wafer of a semiconductor laser device into elements by which the semiconductor laser device 1 in the form of a wafer is divided into elements, a recess S for element isolation is formed by etching on part of the surface of the wafer at which the wafer is to be isolated and then bending stress is applied to the wafer and the wafer is isolated into elements. Another recess S for element isolation for forming a resonator end face R of the semiconductor laser device 1 is formed on the surface which is located farther away from an active layer 5 than the other surface.</p> |
