FORMATION OF RESIST PATTERN

摘要

PURPOSE:To provide a method for forming a highly accurate resist pattern easily and stably by preventing abnormality in the profile of resist pattern in the vicinity of interface between a chemical amplification resist and a film to be micromachined. CONSTITUTION:A film to be micromachined, i.e., a carbon film 12, is formed on a silicon substrate 11 and a chemical amplifying resist film 13 is formed thereon. The resist film 13 is then exposed into a desired pattern and subjected to post exposure baking before it is developed to form a resist pattern. In such method for forming a resist pattern, the carbon film 12 is exposed to a gas containing active hydrogen under an environment containing no basic substance immediately after formation thereof and prior to formation of the resist film 13.