| 摘要 |
The thin film electroluminescence element is mfd. by depositing an indium tin oxide (ITO) transparent electrode (2) of 2000 angstroms on the transparent glass substrate (1), depositing a first insulating layer (3) comprising Y2O3 film (3a) of 1000 angstroms, PLZT film (3b) of 2000 angstroms and Y2O3 film (3c) of 1000 angstroms on the electrode (2), depositing a light-emitting layer (4) of 6000 angstroms on the layer (3), depositing a second insulating layer (5) of 3000 angstroms on the layer (4), and depositing a metal (Al) electrode (6) of 2000 angstroms.
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