| 摘要 |
<p>The solid image pick-up element is characterized by (a) forming a p-type well (4) on the n-type substrate (b), and ion-impregnating an n- impurity into the fixed portion of the well (4) to form a photodiode (1) and a source/drain (2,3), (b) forming an insulating film and a gate (G1,G2), (c) forming an insulating layer (7) for isolating a color filter layer and a photochromic (9) as a photoelectric accumulating control device (11) between the color filters (5) enclosed with a protective film (8). The solid image pick-up element controls an electric charge quantity acculated in the photoelectric conversion element.</p> |
