| 摘要 |
A semiconductor laser for producing visible light includes a first conductivity type semiconductor substrate; a first conductivity type semiconductor first cladding layer, a semiconductor active layer of GaAs1-yPy (y</=0.45), and a second conductivity type second cladding layer, the first cladding layer, the active layer, and the second cladding layer being successively disposed on the semiconductor substrate, the first and second cladding layers having substantially the same composition and a different composition from the active layer, thereby forming heterojunctions with the active layer, and having a lattice constant different from the lattice constant of the active layer and introducing stress into the active layer without producing dislocations in the active layer; and first and second electrodes electrically connected to the substrate and the second cladding layer, respectively.
|
