发明名称 |
Process for forming low dielectric constant insulation layer on integrated circuit structure |
摘要 |
A process is described for forming a low dielectric constant insulation layer on an integrated circuit structure on a semiconductor wafer by first forming a composite layer, comprising one or more extractable materials and one or more matrix-forming insulation materials, over an integrated circuit structure on a semiconductor wafer, and then selectively removing the extractable material from the matrix-forming material without damaging the remaining matrix material, thereby leaving behind a porous matrix of the insulation material. In one embodiment, the composite layer is formed from a gel. The extractable material is removed by first dissolving it in a first liquid which is not a solvent for the matrix-forming material to form a solution. This solution is then removed from the matrix-forming material by rinsing the matrix in a second liquid miscible with the first solvent and which also is not a solvent from the matrix-forming material. The second liquid is then preferably removed from the matrix-forming material either by lyophilizing (freeze drying) or by raising the pressure and temperature above the critical point of the second liquid.
|
申请公布号 |
US5393712(A) |
申请公布日期 |
1995.02.28 |
申请号 |
US19930084829 |
申请日期 |
1993.06.28 |
申请人 |
LSI LOGIC CORPORATION |
发明人 |
ROSTOKER, MICHAEL D.;PASCH, NICHOLAS F.;KAPOOR, ASHOK K. |
分类号 |
H01L21/316;H01L21/768;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/316 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|