Semiconductor memory integrated circuit.

摘要

A memory integrated circuit comprises an array of memory cells each including a latch circuit and a pair of P-channel access transistors. A word line for each row of memory cells is driven by a word driver circuit including an emitter follower at the output stage thereof. The word line is selected by a low-state thereof to turn on the P-channel access transistor, whereby the maximum gate-source voltage of the P-channel access transistor is as high as the supply voltage irrespective of the potential of signal node of the latch circuit. Hence, a higher-speed operation of the memory integrated circuit can be obtained. Moreover, since a word line is selected by a low-state thereof, current flowing in unselected NTL word driver circuits can be reduced. Furthermore, since cutoff is not effected until the potential of signal node becomes equal to the potential of the high-potential voltage source, writing operation can be effected at a high speed so that probability of an alpha -ray error can be reduced. <IMAGE>