| 摘要 |
PURPOSE:To provide ZnSe II-VI semiconductor light emitting element achieving low-resistance and low drive voltage. CONSTITUTION:N-ZnSe 52, n-ZnSSE 53, n-ZnSe 54, CdZnSe 55, p-ZnSe 2, p- AlGaAs 3, and p-GaAs 4 are successively laminated on n-GaAs substrate 1. Further, polyimide 58 and p-electrode 59 for consisting current is formed on it. In this manner, by providing the GaAs layer 4 as a contact layer and AlxGa1-xAs (0<=x<=1) layer 3 directly below it, the contact resistance can be reduced to approximately 1X10<-5>OMEGAcm as compared with conventional methods, thus reducing drive voltage and improving characteristics. |
