Thin film semiconductor device and method of production

摘要

A thin film semiconductor device having a silicon thin film semiconductor layer deposited on an ordinary glass substrate at low temperatures of not over 600 DEG C. The silicon film has at least about a 40% degree of crystallinity and mainly {111} preferred orientation. The thin film can be formed by a low pressure chemical vapor deposition process using monosilane (SiH4) as a source gas at a total reactor pressure of about 15 mTorr or less or at a silane partial pressure of about 10 mTorr or less at a vapor phase deposition temperature of not more than about 600 DEG C.