| 摘要 |
A method for polishing a single side of a semiconductor wafer (31) is disclosed for improving wafer flatness. A protective layer (32) is formed on one side of the semiconductor wafer (31). The semiconductor wafer (31) is polished on both sides concurrently using double sided polishing equipment (38,41). The protective layer (32) prevents a surface (37) of the semiconductor wafer (31) from being polished while the other unprotected surface (36) is polished thereby producing a single sided polished wafer.
|
