Core organization and sense amplifier having lubricating current, active clamping and buffered sense node for speed enhancement for non-volatile memory

摘要

Sense amplifier performance is improved in a sense amplifier circuit connected to a semiconductor memory. A current mirror circuit is connected to a data node on the side of a pass transistor adjacent to core memory. The other side of the current mirror circuit is connected to modify the current provided from a memory reference cell. This provides a lubricating current to the pass transistor to ensure that it does not shut down in the absence of current flow from a core memory cell. Sense amplifier speed is improved by a higher transconductance level in the pass transistors. Speed is improved by reducing sense node capacitance through buffer circuitry. Core performance is enhanced by interspersed reference columns within the core at distributed locations.