| 摘要 |
<p>A low impedance interconnection assembly (10) for use with high frequency switching power semiconductor devices (16) includes a low inductance modular capacitor (12), multi-layer planar bus structure (14) and semiconductor switching devices (16) assembled as a laminated unitary structure. Terminals electrically and physically connect the positive electrode of the modular capacitor (12) to the positive DC voltage potential carried by the bus structure (14) and the positive DC input of the semiconductor switch (12) and other terminals electrically and mechanically couple the negative electrode of the modular capacitor (12) to the negative DC voltage potential layer of the bus structure (14) and the negative DC input of the switching device (16). The low inductance modular capacitor (12) is made of a number of capacitor elements (12) having their respective positive electrodes bonded to a copper foil pattern strip to define a positive electrode and their respective negative electrode terminals to a second copper foil strip to define the negative electrode.</p> |
