PROCESS FOR PRODUCING HIGH-RESISTANCE SILICON CARBIDE

摘要

A process is disclosed for producing high-resistance SiC from a low-resistance starting material. The flat donor levels of a prevailing nitrogen impurity are overcompensated by admixture of a trivalent element, the concentration of said doping element in the SiC being such that it changes the conductivity type from a n-conductivity to a p-conductivity. In addition, a transition element is added having donor levels approximately in the middle of the SiC energy gap, so that the excess acceptor levels are in turn compensated and a high specific resistance is achieved.