| 摘要 |
<p>An accelerometer is fabricated by forming a proofmass (294, 295, 544) and at least one associated hinge (296, 522) in a silicon substrate (12, 112) by ion implantation and the formation of anoxide support layer (40, 42, 44) below the proofmass, subsequently integrally bonding two complementary proofmass (294, 295) and substrate structures (112) together, and then removing the oxide support layer (272) to leave the proofmass (294, 295) supported by the hinge (296) within the body of silicon material. The proofmass (300) may be electrically connected to a lead (174) extending through an etched recess (178) in one of the substrates; and the proofmass (294, 295, 300) may be electrically isolated or separated from the substrates (112) by an oxide layer (272) and by a change in conductivity type of the semiconductor material where the hinge (296) is structurally mounted to the substrates.</p> |
