| 摘要 |
PURPOSE:To suppress the capacity drop of a capacitor by reducing the quantity of fluorine within a high-permitivity film, and preventing an increase in the thickness of an SiO2 film which arises at the interface with the electrode to become one electrode of the capacitor. CONSTITUTION:This manufacture comprises a process of growing a dielectric film and the oxide films of a semiconductor on a semiconductor substrate, next, a process of crystallizing the dielectric film by heat-treating the semiconductor substrate, and next, a process of removing the oxide film. |
