| 摘要 |
PURPOSE:To control the film thickness of a ferroelectric thin film precisely and to flatten the surface of the ferroelectric thin film by etching the surface of the ferroelectric thin film, after the formation of the ferroelectric thin film. CONSTITUTION:An Si thermal oxide film 2, a Ti film 3, a PT film 4 are formed on the surface of an n-type silicon substrate 1. Next, a ferroelectric thin film 5 is formed on the Pt film. And etching is performed by accelerating and make argon ions 6, produced by the use of the ECR plasma of Ar gas, bombard against the surface of the ferroelectric thin film 5. As the result of this, it becomes possible to control the film thickness of the ferroelectric thin film 5 and flatten the surface of the ferroelectric thin film 5. Accordingly, leakage current density becomes smaller, and insulation withstand voltage becomes higher too. And it becomes possible to thin the ferroelectric thin film 5 further. Besides, it becomes possible to uniformize the characteristics of the devices, and high integration of the devices becomes feasible. |
