Compact monolithic wide band HEMT low noise amplifiers with regulated self-bias

摘要

Monolithic regulated self-bias circuits for High Electron Mobility Transistor (HEMTs) integrated circuit applications provide reliable performance which can withstand wide HEMT threshold voltage variation (+/-5 V). The threshold voltage variations are inherent with HEMT devices due to the nature of HEMT process fabrication and material growth properties. Three regulated self-bias circuits are disclosed: active regulated negative current source bias; active regulated positive current source bias; resistive self-bias connected to a cascode source-follower amplifier. The positive and negative regulated current source bias can also be connected with HEMT low noise amplifiers.