| 摘要 |
<p>PURPOSE:To improve a display grade by forming ruggedness on the gate electrode interface side of gate insulating films and a flattening surface at the other interface. CONSTITUTION:A gate electrode 22, first to third gate insulating films 23 to 25, a channel part intrinsic semiconductor film 26 and a channel part insulating film 27 are formed in this order on one substrate 21 of a pair of light transparent substrates arranged via a liquid crystal layer. A pair of contact part electrode films 28a, 28b are formed on the insulating film 27 and further, a source electrode 29 and a drain electrode 30 are respectively formed. A picture element electrode 31 is connected to the drain electrode 30. The second gate insulating film 24 is so formed as to flatten the difference in level generated by the gate electrode 22. Accordingly the coverage defects of the gate insulating film 24 are decreased and the display grade is improved.</p> |
